Power MOSFET (N-ch 150V VDSS 250V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 40 A \nPower Dissipation PD 260 W \nDrain-Source voltage VDSS 200 V \nGate-Source voltage VGSS +/-20 V ;

Switching Voltage Regulators

文件：242.59 Kbytes Page：9 Pages

POWER MODULES DIODE

Description The B40J /B40C /B40D series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.