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TK3晶体管资料

  • TK30C别名：TK30C三极管、TK30C晶体管、TK30C晶体三极管

  • TK30C生产厂家：

  • TK30C制作材料：Ge-PNP

  • TK30C性质：开关管 （SW）

  • TK30C封装形式：

  • TK30C极限工作电压：30V

  • TK30C最大电流允许值：0.1A

  • TK30C最大工作频率：<1MHZ或未知

  • TK30C引脚数：

  • TK30C最大耗散功率：0.2W

  • TK30C放大倍数：

  • TK30C图片代号：NO

  • TK30Cvtest：30

  • TK30Chtest：999900

  • TK30Catest：.1

  • TK30Cwtest：.2

  • TK30C代换 TK30C用什么型号代替：3AG87B,

TK3价格

参考价格：￥2.4104

型号：TK30A06N1,S4X 品牌：Toshiba Semiconductor an 备注：这里有TK3多少钱，2024年最近7天走势，今日出价，今日竞价，TK3批发/采购报价，TK3行情走势销售排行榜，TK3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TK3

包装：散装 描述：TERMINAL KIT P184 10EA T49 盒子，外壳，机架 卡机架配件

Vector Electronics

Vector Electronics

Vector Electronics
TK3

包装：散装 描述：TERMINAL KIT P184 10EA T49 盒子，外壳，机架 卡机架配件

Vector Electronics

Vector Electronics

Vector Electronics
TK30A06J3A

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK30A06J3A

Field Effect Transistor Silicon N Channel MOS Type

SwitchingRegulatorApplications ●Lowdrain-sourceON-resistance:RDS(ON)=19mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=34S(typ.) ●Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) ●Enhancementmode:Vth=1.3to2.5V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK30A06N1

Switching Voltage Regulators

MOSFETsSiliconN-channelMOS(U-MOS-H) Features (1)Lowdrain-sourceon-resistance:RDS(ON)=12.2mΩ(typ.)(VGS=10V) (2)Lowleakagecurrent:IDSS=10µA(max)(VDS=60V) (3)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=0.2mA) Applications •SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31A60W

Switching Voltage Regulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1.5mA) Applications •SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31E60X

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31J60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31N60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31N60X

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31V60W

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.078Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31V60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.087Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31V60X

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.078Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK31Z60X

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK33S10N1L

MOSFETs Silicon N-channel MOS (U-MOS??H)

1.Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=8.2mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (4)Enhancementmode:Vth=1.5to2.5V(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK33S10N1Z

MOSFETs Silicon N-channel MOS (U-MOS-H)

1.Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=8.2mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (4)Enhancementmode:Vth=2.0to4.0V(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK35A65W

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.068Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK35A65W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=130ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=1

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK35N65W

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.068Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK35N65W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=130ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK36

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK3608K

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK3608M

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK3610K

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK3610M

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK3612K

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK3612M

Phase Control Thyristor

FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers

Dynex

Dynex

Dynex
TK370A60F

MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.3Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=2.04mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK380A60Y

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK380A65Y

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK380P60Y

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK380P65Y

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK39J60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=150ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.062Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK39N60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=150ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.062Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK39N60X

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.055Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.9mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK39Z60X

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.055Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.9mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3A60DA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3A65D

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3A65DA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3A90E

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.7Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=720V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.25mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3P80E

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.9Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.3mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1A04PL

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=2.5mΩ(typ.)(VGS=10V) •Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TK3R1A04PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1A04PL

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1A04PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1E04PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1E04PL

iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=3.1mΩ(MAX)(VGS=10V) •Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliab

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TK3R1P04PL

High-Efficiency DC-DC Conve

Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1P04PL

iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=3.1mΩ(MAX)(VGS=10V) •Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliab

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TK3R1P04PL

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R1P04PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R2A10PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=100V) (6)Enhancementmode:Vth=1.5to2.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R2A10PL

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R2A10PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R2E06PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=66nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.4mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=60V) (6)Enhancementmode:Vth=1.5to2.5V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R3A06PL

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=2.5mΩ(typ.)(VGS=10V) •Enhancementmode: Vth=1.5to2.5V(VDS=10V,ID=0.7mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TK3R3A06PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=66nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=60V) (6)Enhancementmode:Vth=1.5to2.5V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R9E10PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=100V) (6)Enhancementmode:Vth=1.5to2.5V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R9E10PL

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
TK3R9E10PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TK3产品属性

  • 类型

    描述

  • 型号

    TK3

  • 功能描述

    TERMINAL KIT P184 10EA T49

  • RoHS

    是

  • 类别

    盒，外壳，支架 >> 卡架 - 配件

  • 系列

    -

  • 标准包装

    1

  • 系列

    VectorPak™

  • 附件类型

    EFP 模块

  • 适用于相关产品

    PCB

TK3供应商更多...

更新时间：2024-4-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
TK3714A-ETG-LFG
Broadcom/AVAGO(安华高)
23+
-
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市杰顺创科技有限公司
TK3723B-HG-LFG
TEKNOVUS
20+
BGA
37
原装现货
询价
上海意淼电子科技有限公司
TK39N60W,S1VF(S
Toshiba
23+
N/A
3000
公司只有原装正品
询价
深圳市纳艾斯科技有限公司
TK3715A-ETG-LFG
TEKNOVUS
2018+
BGA
6000
全新原装正品现货,假一赔佰
询价
深圳市科创腾达科技有限公司
TK3711-EBG-LF
TEKNOV
21+
BGA
888888
原装正品现货/订货 价格优惠可开票
询价
深圳市益百分电子有限公司
TK3723B-HG-PBG
BROADCOM
10+
BGA
5000
原装现货价格有优势量多可发货
询价
深圳市金芯世纪电子有限公司
TK3L10Z
SHINDENGEN/新电元
22+
SIP
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
TK3P50D.RPESQ(S
TOSHIBA(东芝)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
中天科工半导体（深圳）有限公司
TK3714A-EEQ-LFG
Broadcom Limited
23+
NA
25000
微控制器MCU单片机-原装正品
询价
深圳市宏捷佳电子科技有限公司
TK380P65Y
TOSHIBA
24+
TO-252
39500
进口原装现货 支持实单价优
询价

TK3芯片相关品牌

  • Altera
  • BILIN
  • Cree
  • ETC
  • HY
  • LUMILEDS
  • MOLEX2
  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

TK3规格书下载地址

TK3参数引脚图相关

TK3数据表相关新闻

DdatasheetPDF页码索引

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