丝印代码：TK25V60X；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 25 A \nPower Dissipation PD 180 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

丝印代码：TK25V60X5；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 120 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.125 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)

General Rectifying Diode

FEATURES · Low VF · Pb Free Terminal · SMD APPLICATIONS · PFC · AC/DC Section of SMPS · Choppers Motor Drives

GENERAL PURPOSE RECTIFIERS

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