丝印代码：TK210V65Z；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：DTMOSⅥ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 15 A \nPower Dissipation PD 130 W ;