Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current ID 20 A \nPower Dissipation PD 165 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER RECTIFIERS(20A,300-600V)

Switchmode Dual Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS 20 AMPERES 300 -- 600 VOLTS

Silicon Controlled Rectifiers

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TRIAC(Through Hole / Non-isolated)

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