Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.3Ω (typ.) • Low leakage current: IDSS = 100 μ A (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for ro

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 500V VDSS 700V)

SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=15A (Tc=114°C). • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns. • Low Peak Forward Voltage : 0.52V(Typ.)

TO-220IS PACKAGE

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SCHOTTKY BARRIER TYPE DIODE

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Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 600 V Forward Current 15 A

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Plastic Ultra-Fast Recover Rectifier

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