isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.24Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.24Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

SCHOTTKY BARRIER RECTIFIERS(15A,30-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diode

SCHOTTKY BARRIER RECTIFIER

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