Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.32Ω (typ.) • Low leakage current: IDSS = 100μ A (max) (VDS = 650 V) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robu

N-Channel 650V (D-S) Power MOSFET

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Power MOSFET (N-ch 500V VDSS 700V)

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(on) = 0.4Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Applications • Switching Voltage Regulato

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(on) = 0.4Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.32Ω (typ.) • Low leakage current: IDSS = 100μ A (max) (VDS = 650 V) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robu

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)