TK100 无线定位终端

Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Applications • Switching Voltage Regulators

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Swiching Regulator,DC-DC Converter Applications Motor Drine Applications

Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.) • High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement-model: Vth = 3.0 to 4.0

MOSFETs Silicon N-Channel MOS (DTMOS)

Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 5 mA) Applications • Switching Voltage Regulators

Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS =

包装：散装 描述：TERM BLK 10P SIDE ENTRY 5MM PCB 连接器，互连器件 线对板

Power MOSFET (N-ch single 30V VDSS 60V)

isc N-Channel MOSFET Transistor

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MOSFETs Silicon N-channel MOS (U-MOS-H)

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Power MOSFET (N-ch single 60V VDSS 150V)

MOSFETs Silicon N-channel MOS (U-MOS-H)

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Isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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Switching Voltage Regulators

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N-Channel MOSFET uses advanced trench technology

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isc N-Channel MOSFET Transistor

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N-Channel MOSFET uses advanced SGT technology

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isc N-Channel MOSFET Transistor

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Swiching Regulator,DC-DC Converter Applications Motor Drive Applications

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Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

TOGGLE SWITCHES - MINIATURE

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100/200

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