ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY

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包装：管件 描述：RELAY GEN PURPOSE SPDT 2A 12VDC 继电器 信号继电器，高达 2 A

包装：管件 描述：RELAY GEN PURPOSE SPDT 2A 12VDC 继电器 信号继电器，高达 2 A

信号继电器

HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY

HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY FEATURES • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW (1a), 400 mW (1c) • High surge voltage: 8,000 V between contacts and coil • UL, CSA, VDE, TÜV, SEMKO approved • Class B c

HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY

HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY FEATURES • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW (1a), 400 mW (1c) • High surge voltage: 8,000 V between contacts and coil • UL, CSA, VDE, TÜV, SEMKO approved • Class B c

Supplementary Overcurrent Protection

Midget Fuses Supplementary Overcurrent Protection

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB1-12T is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Class C Operation • PG = 10 dB at 1.0 W/175 MHz • Omnigold™ Metalization System

QP/P1 SERIES CONNECTOR

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