High-Voltage NPN Silicon Power Transistor

HIGH-VOLTAGE NPN SILICON POWER TRANSISTOR . . . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V(Min) * 3 A Rated Collector Current * fT=2.5MHz(Min) @IC = 200 mA

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain -hFE = 30~150@ IC= 0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) APPLICATIONS • Designed for line operated audio output amplifier,and switching power supply drivers applications.

三极管

isc Silicon PNP Power Transistor

DESCRIPTION • Continuous Collector Current-IC= -5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) • Collector Power Dissipation- : PC= 30W @TC≤ 100℃ APPLICATIONS • Designed for power amplifier and high speed switching applications.

isc Silicon PNP Power Transistor

DESCRIPTION • Continuous Collector Current-IC= -5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) • Collector Power Dissipation- : PC= 20W @TC≤ 100℃ APPLICATIONS • Designed for power amplifier and high speed switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For use in high-frequency drivers In aduio amplifiers

Silicon PNP Power Transistor

DESCRIPTION • Continuous Collector Current-IC= -5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) • Collector Power Dissipation- : PC= 20W @TC≤ 100℃ APPLICATIONS • Designed for power amplifier and high speed switching applications.

BJT

Trans GP BJT PNP 150V 8A