POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP34 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP34/34A/34B/34C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP34/34A/34B/34C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP34 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching

Designed for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • These are Pb−Free Devices*

封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 100V 10A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

大功率 NPN 双极功率晶体管

Silicon NPN Power Transistors

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封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 100V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER)

文件：73.72 Kbytes Page：2 Pages

Complementary power transistors

文件：114.68 Kbytes Page：7 Pages

NPN SILICON POWER TRANSISTORS

文件：584.77 Kbytes Page：6 Pages

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching

Designed for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • These are Pb−Free Devices*

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

Complementary power transistors

文件：114.68 Kbytes Page：7 Pages

TRANS NPN DARL 100V 10A