POWER TRANSISTORS(3A,40-100V,40W)

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 40 WATTS

POWER TRANSISTORS COMPLEMENTARY SILICON

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP31 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current • Customer-Specified Selections Available

Silicon Epitaxial Planar Transistor

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C

General Purpose Amplifier and Switching Applications

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31C

COMPLEMENTARY SILICON POWER TRANSISTORS

Si-Epitaxial PlanarTransistors

General Purpose Silicon Power Transistors • Max. power dissipation with cooling 40 W • Collector current 3 A • Plastic case TO-220AB • Weight approx. 2.2 g • Plastic material has UL class

PNP EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP31/31A/31B/31C APPLICATIONS ·Medium power linear and switching applications

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in general purpose amplifier and switching applications.

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications - Complement to TIP31/31A/31B/31C

Silicon PNP Power Transistors

Features • The Complementary NPN Types are the TIP31 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP31/31A/31B/31C APPLICATIONS ·Medium power linear and switching applications

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type. APPLICAT

PNP Plastic-Encapsulate Transistor

FEATURES • Medium Power Linear Switching Applications

Power transistor

DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type. APPLICAT

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Col lector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ Ic = 3.0 Adc • Collector-Emitter Sustaining Voltage - VCEO(SUS) = 40 Vdc (Min) - T1P31,

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Complement to TIP31. Applications Medium power linear switching applications.

POWER TRANSISTORS COMPLEMENTARY SILICON

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP31/31A/31B/31C APPLICATIONS ·Medium power linear and switching applications

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

PNP Epitaxial Silicon Transistor

FEATURES ● High collector voltage： VCEO=-100V (min) ● Complementary to TIP31C ● RoHS product APPLICATIONS ● Medium Power Linear Switching Applications

SILICON PNP POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP32 series devices are silicon PNP epitaxial-base power transistors designed for power amplifier and high speed switching applications.

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

PNP Transistor Bare Die

Features Collector current up to 3A High switching speed Improved hFE linearity Solderable back metal High Reliability tested grades for Military + Space

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

PNP Transistor Bare Die

Features Collector current up to 3A High switching speed Improved hFE linearity Solderable back metal High Reliability tested grades for Military + Space

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

Silicon PNP Power Transistors

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PNP Epitaxial Silicon Transistor

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TO-220 - Power Transistors and Darlingtons

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PNP EXPITAXIAL PLANAR TRANSISTOR

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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General Purpose Silicon Power Transistors

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Power transistor

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封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 100V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

晶体管

PNP 双极功率晶体管

PNP EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C

PNP Transistor Bare Die

Features Collector current up to 3A High switching speed Improved hFE linearity Solderable back metal High Reliability tested grades for Military + Space

Silicon PNP Power Transistors

Features • The Complementary NPN Types are the TIP31 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

3A PNP Epitaxial Planar Power Transistor

Description TIP32CE3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = -1.2V(max) @ IC = -3A • High collector-emitter sustaining voltage, BVCEO(SUS) = -100V(min) • High current gain-bandwidth product ,

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31CF.

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Large current capacitance ● Complementary NPN Types:TIP31CF APPLICATIONS ● Medium power linear switching applications

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

PNP EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C

PNP EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C

Silicon epitaxial chip of p-n-p medium power transistor (Ic max=3A)

General Description: Silicon epitaxial chip of p-n-p medium power transistor (Ic max=3A) used for general-purpose amplifier and switching application. Complementary pair TIP31C Recommended ultrasonic bonding wire Al Emitter - 2 wire dia 80 µm Base - 1 wire dia 80 µm

PNP Epitaxial Silicon Transistor

FEATURES ● High collector voltage： VCEO=-100V (min) ● Complementary to TIP31C ● RoHS product APPLICATIONS ● Medium Power Linear Switching Applications

PNP Epitaxial Silicon Transistor

FEATURES ● High collector voltage： VCEO=-100V (min) ● Complementary to TIP31C ● RoHS product APPLICATIONS ● Medium Power Linear Switching Applications