POWER TRANSISTORS COMPLEMENTARY SILICON

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C

General Purpose Amplifier and Switching Applications

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

POWER TRANSISTORS(3A,40-100V,40W)

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 40 WATTS

POWER TRANSISTORS COMPLEMENTARY SILICON

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP31/31A/31B/31C APPLICATIONS ·Medium power linear and switching applications

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Col lector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ Ic = 3.0 Adc • Collector-Emitter Sustaining Voltage - VCEO(SUS) = 40 Vdc (Min) - T1P31,

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP31 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current • Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP31/31A/31B/31C APPLICATIONS ·Medium power linear and switching applications

SILICON PNP POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP32 series devices are silicon PNP epitaxial-base power transistors designed for power amplifier and high speed switching applications.

Si-Epitaxial PlanarTransistors

General Purpose Silicon Power Transistors • Max. power dissipation with cooling 40 W • Collector current 3 A • Plastic case TO-220AB • Weight approx. 2.2 g • Plastic material has UL class

Silicon PNP Power Transistors

Features • The Complementary NPN Types are the TIP31 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Complement to TIP31. Applications Medium power linear switching applications.

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications - Complement to TIP31/31A/31B/31C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type. APPLICAT

PNP 双极功率晶体管

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. The TIP31, TIP31A, TIP31B, TIP31C, (NPN); and TIP32, TIP32A, TIP32B, TIP32C,(PNP) are complementary devices • Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc\n• Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A=80 Vdc (min) - TIP31B, TIP32B=100 Vdc (min) - TIP31C, TIP32C\n• High Current Gain Bandwidth ProductfT = 3.0 MHz (min) @ IC = 500 mAdc\n•;

Power transistor

文件：167.79 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 60V 3A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

中等功率双极型晶体管

Silicon PNP Power Transistors

文件：214.66 Kbytes Page：2 Pages

General Purpose Silicon Power Transistors

文件：106.83 Kbytes Page：2 Pages

Silicon PNP Power Transistors

文件：130.77 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：130.78 Kbytes Page：4 Pages

PNP Epitaxial Silicon Transistor

文件：532.71 Kbytes Page：5 Pages

Silicon PNP Power Transistors

Features • The Complementary NPN Types are the TIP31 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

Power transistor

文件：167.79 Kbytes Page：8 Pages

功率三极管