POWER TRANSISTORS COMPLEMENTARY SILICON

POWER TRANSISTORS COMPLEMENTARY SILICON

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

POWER TRANSISTORS(3A,40-100V,40W)

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 40 WATTS

NPN (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

Medium Power Linear Switching Applications. • Complement to TIP32 / TIP32A / TIP32B / TIP32C

General Purpose Amplifier and Switching Applications

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

Si-Epitaxial PlanarTransistors

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Ope

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications - Complement to TIP32/32A/32B/32C

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP32 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Col lector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ Ic = 3.0 Adc • Collector-Emitter Sustaining Voltage - VCEO(SUS) = 40 Vdc (Min) - T1P31,

NPN Epitaxial Silicon Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP32 Series

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP32. Applications Medium power linear switching applications.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Medium Power Linear Switching Applications

TRANSISTOR (NPN)

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封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 80V 3A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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SILICON NPN POWER TRANSISTORS

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Silicon NPN Power Transistors

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General Purpose Silicon Power Transistors

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Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 80V 3A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Designed for Complementary Use with the TIP32 Series

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