POWER TRANSISTORS(3A,40-100V,40W)

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 40 WATTS

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP32 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

NPN (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

Medium Power Linear Switching Applications. • Complement to TIP32 / TIP32A / TIP32B / TIP32C

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications • Complementary to TIP32/32A/32B/32C

General Purpose Amplifier and Switching Applications

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS

Si-Epitaxial PlanarTransistors

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Ope

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications - Complement to TIP32/32A/32B/32C

Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

NPN Epitaxial Silicon Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP32 Series

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Col lector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ Ic = 3.0 Adc • Collector-Emitter Sustaining Voltage - VCEO(SUS) = 40 Vdc (Min) - T1P31,

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Medium Power Linear Switching Applications

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP32. Applications Medium power linear switching applications.

Silicon NPN Power Transistors

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isc Silicon NPN Power Transistors

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TRANSISTOR (NPN)

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SILICON NPN POWER TRANSISTORS

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Complementary Silicon Power Transistor

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TO-220-3L Plastic-Encapsulate Transistors

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Complementary Silicon Plastic Power Transistor

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Silicon NPN Power Transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 40V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

普通三极管

40V,3A,Medium Power NPN Bipolar Transistor

中等功率双极型晶体管

Si-Epitaxial PlanarTransistors

POWER TRANSISTORS(3A,40-100V,40W)

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 40 WATTS

POWER TRANSISTORS COMPLEMENTARY SILICON

POWER TRANSISTORS COMPLEMENTARY SILICON

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type. APPLICAT

NPN (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

Medium Power Linear Switching Applications. • Complement to TIP32 / TIP32A / TIP32B / TIP32C

General Purpose Amplifier and Switching Applications

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Ope

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

Medium Power Linear Switching Applications

Medium Power Linear Switching Applications - Complement to TIP32/32A/32B/32C

Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP32 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP32. Applications Medium power linear switching applications.

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Col lector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ Ic = 3.0 Adc • Collector-Emitter Sustaining Voltage - VCEO(SUS) = 40 Vdc (Min) - T1P31,

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

NPN Epitaxial Silicon Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP32 Series

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Medium Power Linear Switching Applications

High Power Bipolar Transistor

Features: • Collector-Emitter sustaining voltage - VCEO(sus) = 60V (Min.) - TIP31A, TIP32A = 100V (Min.) - TIP31C, TIP32C • Collector-Emitter saturation voltage - VCE(sat) = 1.2V (Max.) at IC = 3A • Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA

Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

POWER TRANSISTORS COMPLEMENTARY SILICON

POWER TRANSISTORS COMPLEMENTARY SILICON

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

POWER TRANSISTORS(3A,40-100V,40W)

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 40 WATTS