POWER TRANSISTORS(1.0A,40-100V,30W)

Medium Power Linear Switching Applications

Features • Complementary to TIP29/TIP29A/TIP29B/TIP29C

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS THE TIP29 SERIES (NPN) AND TIP30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND SWITCHING APPLICATIONS.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP29/29A/29B/29C APPLICATIONS ·For use in general purpose power amplifer and switching applications

1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type TIP29/29A/29B/29C APPLICATIONS • For use in general purpose power amplifer and switching applications

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS • Designed for Complementary Use with the TIP29 Series • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current • Customer-Specified Selections Available

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

Complementary Silicon Plastic Power Transistors

Features • Collector-Emitter sustaining voltage - Vceo (sus) = 60V (Minimum) - TIP30A = 100V (Minimum) - TIP30C • Collector-Emitter saturation voltage - Vce (sat) = 0.7V (Maximum) at Ic = 1A • Current gain-bandwidth product fT = 3MHz (Minimum) at Ic = 200 mA

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

Silicon PNP Power Transistors

文件：105.35 Kbytes Page：3 Pages

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 1A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Power Bipolar Transistor

文件：335.68 Kbytes Page：6 Pages

High Power Bipolar Transistors

文件：238.07 Kbytes Page：4 Pages

SILICON PNP POWER TRANSISTORS

文件：351.79 Kbytes Page：2 Pages

1.0 Amp Complementary Silicon Power Transistors

文件：200.93 Kbytes Page：3 Pages

1.0 Amp Complementary Silicon Power Transistors

文件：252.92 Kbytes Page：3 Pages

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Trans GP BJT PNP 60V 1A 3-Pin(3+Tab) TO-220AB Rail

中等功率双极型晶体管

1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS PNP 60V 1A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个