Medium Power Linear Switching Applications

Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

General purpose Amplifier and Switching Applications

TIP29, 29A, 29B, 29C NPN PLASTIC POWER TRANSISTORS TIP30, 30A, 30B, 30C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

POWER TRANSISTORS(1.0A,40-100V,30W)

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS

. . . designed for use in general purpose amplifier and switching applications. NPN -> TIP29B, TIP29C PNP -> TIP30B,TIP30C

High Power Bipolar Transistors

Features • Collector-Emitter sustaining voltage - Vceo (sus) = 60V (Minimum) - TIP29A = 100V (Minimum) - TIP29C • Collector-Emitter saturation voltage - Vce (sat) = 0.7V (Maximum) at Ic = 1A • Current gain-bandwidth product ft = 3MHz (Minimum) at Ic = 200mA

isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 100V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30C APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP30/30A/30B/30C APPLICATIONS ·For use in general purpose power amplifier and switching applications

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are TIP30A and TIP30C. Features ■ NPN transistors Applications ■ Audi

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP29A and TIP29C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP30A and TIP30C respectively.

1.0 A，100 V，NPN 双极功率晶体管

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C (NPN); and TIP30, A, B, C (PNP) are complementary devices. • Pb-Free Packages are Available;

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 100V 1A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 1A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN TO-220 Plastic-Encapsulate Transistors

中等功率双极型晶体管

1.0 Ampere NPN Type Epitaxial Silicon Power Transistors

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Silicon NPN Power Transistors

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NPN SILICON POWER TRANSISTORS

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High Power Bipolar Transistor

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High Power Bipolar Transistors

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TO-220 - Power Transistors and Darlingtons

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1.0 Amp Complementary Silicon Power Transistors

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1.0 Amp Complementary Silicon Power Transistors

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SILICON NPN POWER TRANSISTORS

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NPN Epitaxial Silicon Transistor

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1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers