10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP140, TIP141 and TIP142 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

POWER TRANSISTORS(10A,60-100V,125W)

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and low frequency switching applications.

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and low frequency switching applications.

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and low frequency switching applications.

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP140, TIP141 and TIP142 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

SILICON DARLINGTON TRANSISTOR PNP EPITAXIAL(HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN •Complementary to TIP140/141/142

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching

POWER DARLINGTONS

DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-Emitter sustaining voltage VCEO (sus) = 60V (Minimum) - TIP145 = 80V (Minimum) - TIP141, TIP146 = 100V (Minimum) - TIP142, TIP147 • Collector-Emitter saturation voltage VCE (sat) = 2V (Maximum

封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-218-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP DARL 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

功率 10A 80V PNP

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

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Darlington Complementary Silicon Power Transistors

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SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

PNP (HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN MIN hFE=1000@ VCE = -4V, IC= -5A Monolithic Construction With Built In Base-Emitter Shunt Resistors Industrial Use Complement to TIP140F/141F/142F

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140F/141F/142F

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

Darlington Complementary Silicon Power Transistors

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Darlington Complementary Silicon Power Transistors

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Silicon PNP Darlington Power Transistor

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isc Silicon PNP Darlington Power Transistor

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Monolithic Construction With Built In Base-Emitter Shunt Resistors

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BJT

INTERCONNECT BATTERY HOLDERS

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LOW PROFILE - P.C. BOARD MOUNT AUDIO TRANSFORMERS

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LOW PROFILE - P.C. BOARD MOUNT AUDIO TRANSFORMERS

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Aluminum Capacitors SMD (Chip), High Temperature, Low Impedance

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Aluminum Capacitors SMD (Chip), High Temperature, Low Impedance

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