Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

1 5/16

FEATURES • Suitable model for all industrial applications • Center tap available • Continuous rotation and mechanical stops both standard • Large electrical angle: 352° ± 2° • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

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