Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

Silicon Power darlington Complementary transistors

Darlington Transistor

Description: Designed for general-purpose amplifier and low speed switching applications. Features: • Collector-emitter sustaining voltage-VCEO (sus) = 60V (Min.) - TIP110, TIP115 • Collector-emitter saturation voltage-VCE (sat) = 2.5V (Max.) at IC = 2A • Monolithic construction with built-

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS.

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use

DARLINGTON TRANSISTOR (NPN)

DARLINGTON TRANSISTOR (NPN) FEATURES • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 500 at 4 V, 2 A

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications TO-220 Plastic Package

Darlington Power Transistors (NPN)

Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117. ■ STMicroe

达林顿晶体管

中等功率双极型晶体管

达林顿管

Silicon NPN Darlington Power Transistors

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TO-220 - Power Transistors and Darlingtons

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 60V TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 60V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor

文件：285.31 Kbytes Page：2 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：148.66 Kbytes Page：8 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：99.95 Kbytes Page：8 Pages

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

APPLICATIONS n LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applicatio

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110Ais designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain

TTIP110A PNP Epitaxial Silicon Transistor

Collector current 10A Collector disspation Pc = 75W (Tc =25°C)

Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

Plastic Medium-Power Complementary Silicon Transistors

文件：99.95 Kbytes Page：8 Pages

Silicon NPN Darlington Power Transistor

文件：234.52 Kbytes Page：2 Pages

Silicon NPN Darlington Power Transistor

文件：285.31 Kbytes Page：2 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：148.66 Kbytes Page：8 Pages

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

文件：106.06 Kbytes Page：3 Pages

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

文件：106.06 Kbytes Page：3 Pages

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

文件：106.06 Kbytes Page：3 Pages

PnP Epitaxial Silicon Transistor

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LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

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LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

文件：106.06 Kbytes Page：3 Pages

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

文件：106.06 Kbytes Page：3 Pages

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

文件：106.06 Kbytes Page：3 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：148.66 Kbytes Page：8 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：99.95 Kbytes Page：8 Pages

POWER RECTIFIERS(1.0A,500-1000V)

POWER RECTIFIERS(1.0A,500-1000V)

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS