Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

PNP Plastic Medium-Power Silicon Transistors

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compac

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP100/101/102 APPLICATIONS • For industrial use

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

PNP SILICON POWER DARLINGTONS

TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS.

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A =

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102

Silicon PNP Darlington Power Transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 80V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

达林顿三极管

中等功率双极型晶体管

Silicon PNP Darlington Power Transistors

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TO-220 - Power Transistors and Darlingtons

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Silicon Power darlington Complementary transistors

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PNP Plastic Medium-Power Silicon Transistors

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Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

Monolithic Construction With Built In Base-Emitter Shunt Resistors

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Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)