DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

PNP SILICON POWER DARLINGTONS

TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP100/101/102 APPLICATIONS • For industrial use

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A =

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102

PNP Plastic Medium-Power Silicon Transistors

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compac

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS.

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

PNP Plastic Medium-Power Silicon Transistors

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Plastic Medium-Power Complementary Silicon Transistors

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Silicon PNP Darlington Power Transistors

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Silicon PNP Darlington Power Transistors

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TO-220 - Power Transistors and Darlingtons

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Plastic Medium?뭁ower Complementary Silicon Transistors

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Silicon Power darlington Complementary transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 80V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

达林顿三极管

中等功率双极型晶体管

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

Monolithic Construction With Built In Base-Emitter Shunt Resistors

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Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

106/206 In-Line Flanged Diaphragm Seals

FEATURES „ 316L Stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging „ Large 21/2˝ diaphragm compatible with most Ashcroft instrumentation

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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