MICROWAVE POWER GaAs FET

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HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz

HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz

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C-Band Internally Matched FET

[Eudyna] DESCRIPTION The FLM6472-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURE

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

6.40-7.20GHz 8-Watt Internally-Matched Power FET

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6.40-7.20GHz 8-Watt Internally-Matched Power FET

文件：169.77 Kbytes Page：4 Pages