MICROWAVE POWER GAAS FET

文件：153.45 Kbytes Page：5 Pages

MICROWAVE POWER GAAS FET

MICROWAVE POWER GaAs FET

文件：153.1 Kbytes Page：4 Pages

IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

文件：164.43 Kbytes Page：4 Pages

MICROWAVE POWER GaAs FET

文件：114.14 Kbytes Page：4 Pages

MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET

文件：114.14 Kbytes Page：4 Pages

HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz

文件：145.12 Kbytes Page：4 Pages

HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

C-Band Internally Matched FET

文件：250.44 Kbytes Page：4 Pages