MICROWAVE POWER GaAs FET

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MICROWAVE POWER GaAs FET

HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz

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C-Band Internally Matched FET

[Endyna] DESCRIPTION The FLM5964-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Ou

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

5.90-6.40 GHz 4-Watt Internally Matched Power FET

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5.9 - 6.4 GHz Multi-Stage Power Amplifier

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