MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

14.0-14.5GHz, 2W Internally Matched Power FET

14.0-14.5GHz, 2W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EI

14.0-14.5GHz, 2W Internally Matched Power FET

14.0-14.5GHz, 2W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EI

GaAs MES FET

2 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ1414-2E is power GaAs FET which provides high gain, high efficiency and high output power in Kuband. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit.

2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

14.00-14.50GHz 2-Watt Internally-Matched Power FET

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