MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

12.75-13.25 GHz 8-Watt Internally Matched Power FET

FEATURES • 12.75– 13.25 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39 dBm Output Power at 1dB Compression • 6.5 dB Power Gain at 1dB Compression • 28 Power Added Efficiency • Hermetic Metal Flange Package • 100 Tested for DC, RF, and RTH

X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1213-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance FEATURES • High Output Power:

THERMOCOUPLE INPUT LIMIT ALARM

文件：94.41 Kbytes Page：4 Pages

THERMOCOUPLE INPUT LIMIT ALARM

文件：94.41 Kbytes Page：4 Pages