P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

• 8 A Continuous On-State Current • 80 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGTof 20 mA • Compliance to ROHS

SILICON CONTROLLED RECTIFIERS

8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA

SILICON CONTROLLED RECTIFIERS

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isc Thyristors

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P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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TIRISTORI I TRIJACI

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Thyristor

封装/外壳：TO-220-3 包装：散装 描述：SCR 600V 8A TO220 分立半导体产品 晶闸管 - SCR

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS