P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 5 A Continuous On-State Current • 30 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGTof 200 µA • Compliance to ROHS

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS ● Silicon Controlled Rectifiers ● 50 V to 600 V ● 5 A DC ● 30 A Surge Current ● MAX IGT of 200 A

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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Thyristor

PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS

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SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)