丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 짹70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

文件：1.54235 Mbytes Page：30 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC TRANSCEIVER HALF 1/1 8SOIC 集成电路（IC） 驱动器，接收器，收发器

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

丝印代码：2450；THVD24x0 ±70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

1 Features . Meets or exceeds the requirements of the TIA/EIA-485A and TIA/EIA-422B standards . Functional Safety-Capable . Documentation available to aid functional safety system design . 3-V to 5.5-V supply voltage . Differential output exceeds 2.1 V for PROFIBUS compatibility with 5-V s

封装/外壳：8-VDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRANSCEIVER HALF 1/1 8VSON 集成电路（IC） 驱动器，接收器，收发器

THVD24x0 짹70-V Fault-Protected 3.3-V to 5-V RS-485 Transceivers With IEC ESD

文件：1.54235 Mbytes Page：30 Pages

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

Fast Recovery Dual Diode Modules 50 Amperes/600-1200 Volts

文件：72.66 Kbytes Page：4 Pages

FAMILY OF 23-mA 220-kHz RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.12671 Mbytes Page：47 Pages