290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：1.38945 Mbytes Page：35 Pages

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：1.17134 Mbytes Page：35 Pages

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：1.39343 Mbytes Page：36 Pages

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：1.39343 Mbytes Page：36 Pages

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：1.17134 Mbytes Page：35 Pages

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.