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THN6301

NPN SiGe RF TRANSISTOR

文件:206.98 Kbytes Page:11 Pages

TACHYONICS

THN6301

NPN SiGe RF TRANSISTOR

TACHYONICS

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

AUK

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

AUK

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

AUK

NPN Planer RF TRANSISTOR

[Tachyonics CO,. LTD] □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mA □ Application LNA and wide band ampli

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Planer RF TRANSISTOR

[Tachyonics CO,. LTD] □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mA □ Application LNA and wide band ampli

ETCList of Unclassifed Manufacturers

未分类制造商

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

AUK

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

AUK

SiGe NPN Transistor

AUK

NPN SiGe RF TRANSISTOR

文件:206.98 Kbytes Page:11 Pages

TACHYONICS

NPN SiGe RF TRANSISTOR

文件:206.98 Kbytes Page:11 Pages

TACHYONICS

NPN SiGe RF TRANSISTOR

文件:206.98 Kbytes Page:11 Pages

TACHYONICS

NPN SiGe RF TRANSISTOR

文件:206.98 Kbytes Page:11 Pages

TACHYONICS

NPN SiGe RF TRANSISTOR

文件:206.98 Kbytes Page:11 Pages

TACHYONICS

Ultrahigh-Speed Switching Applications

Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

SANYO

三洋

Dual N-Channel , Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed espec

FAIRCHILD

仙童半导体

Triggered Vacuum Gaps

The Triggered Vacuum Spark Gaps are ideal high-voltage switches for applications where a wide operating voltage range is desired. The low end of the operating voltage range is independent of the Static Breakdown Voltage (SBV). Operating ranges from 300 volts to 80 kilovolts are possible. Switching

PERKINELMER

Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller

The HIP6301 multi-phase PWM control IC together with its companion gate drivers, the HIP6601B, HIP6602B, HIP6603B or HIP6604B and external MOSFETs provides a precision voltage regulation system for advanced microprocessors. Features • Multi-Phase Power Conversion • Precision Channel Current S

INTERSIL

SANKEN ELECTRIC COMPANY, LTD.

Scope : The present specifications shall only apply to sanken swtiching regulator hybrid IC, type STR-s6301.

SANKEN

三垦

THN6301产品属性

  • 类型

    描述

  • 型号

    THN6301

  • 制造商

    TACHYONICS

  • 制造商全称

    TACHYONICS

  • 功能描述

    NPN SiGe RF TRANSISTOR

更新时间:2026-3-17 19:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SOD-523
23+
NA
15659
振宏微专业只做正品,假一罚百!
AVK
24+
SOT323
990000
明嘉莱只做原装正品现货
Tachyonics
03+
SOD323
529
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AUK
23+
SOT-523
50000
原装正品 支持实单
TACHYONIC
2450+
SOT323
8850
只做原装正品假一赔十为客户做到零风险!!
TACHYON
25+
SOT23-3
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
TACHYONIC
25+
SOT323
9000
进口原装现货支持实单欢迎来电
AUK
23+
SOT-323
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
AUK
23+
SOT23
5000
原装正品,假一罚十
原装AUK
19+
SOT-323
20000
原装现货假一罚十

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