SiGe NPN Transistor

□ Features - Medium power(800mW, 1W) application - Power gain GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm GP = 16 dB at VCE = 3.0 V, f = 434 MHz, PIN = 0 dBm - Output

SiGe NPN Transistor

10/100/1000BASE-T CONTROLLER

BCM5702 OVERVIEW The BCM5702 is a fully-integrated 10/100/1000BASE-T Gigabit Ethernet media access control and physical layer transceiver solution for high-performance network applications. The BCM5702 is a highly integrated solution combining a triple-speed, IEEE 802.3 compliant media access con

DC/DC Converter Applications

Features • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The CPH5702 consists of two chips encapsulated in a package which are equivalent to the CPH3209 and the SB07-03C, respectively. • Ultrasmall-sized package

10-Bit, 40 MSPS A/D Converter

Description The HI5702 is a monolithic, 10-bit, analog-to-digital converter fabricated in a BiCMOS process. It is designed for high speed applications where wide bandwidth and low power consumption are essential. Its 40 MSPS speed is made possible by a fully differential pipeline architecture whi

10-Bit, 40 MSPS A/D Converter

Description The HI5702 is a monolithic, 10-bit, analog-to-digital converter fabricated in a BiCMOS process. It is designed for high speed applications where wide bandwidth and low power consumption are essential. Its 40 MSPS speed is made possible by a fully differential pipeline architecture whi

DC / DC Converter Applications

TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode Features • Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The MCH5702 consists of two chips which are equivalent to the MCH6201 and the S