SiGe NPN Transistor

□ Features - Medium power(800mW, 1W) application - Power gain GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm GP = 16 dB at VCE = 3.0 V, f = 434 MHz, PIN = 0 dBm - Output

SiGe NPN Transistor

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

Silicon Digital Attenuator, 0.125dB LSB, 8-Bit, 50MHz to 20GHz

FEATURES ► Frequency range: 50MHz to 20GHz ► Attenuation range: 31.875dB with 0.125dB step size ► Low insertion loss ► 1.4dB typical up to 6GHz (5V supply) ► 1.8dB typical up to 12GHz (5V supply) ► 2.6dB typical up to 20GHz (5V supply) ► Attenuation accuracy: −(0.1 + 2.0% of attenuation

High Current Toroid Inductors

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CIRCUIT PROTECTION

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Modular air source ion bar

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