NPN SiGe RF POWER TRANSISTOR

NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application. □ FEATURES o 4.8 Volt op

SiGe NPN Transistor

□ Features o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz o GP = 8.5 dB at f = 900 MHz □ Applications o VHF and UHF band medium power amplifier

SiGe NPN Transistor

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

Assembled Adafruit 0.56 4-Digit 7-Segment Display - w/ I2C Backpack STEMMA QT - Blue

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MECHANICAL HEAT DETECTORS

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Instrument Knobs

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Mechanical Heat Detectors

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