SiGe NPN Transistor

□ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at VCE = 2

SiGe NPN Transistor

DC axial compact fan

DC axial compact fan ebm-papst St. Georgen GmbH & Co. KG Hermann-Papst-Straße 1 D-78112 St. Georgen Phone +49 7724 81-0 Fax +49 7724 81-1309 info2@de.ebmpapst.com www.ebmpapst.com

NPN Silicon RF Transistor

DESCRIPTION The START405 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performa

Surface Mount Quartz Crystal

DESCRIPTION The Model 405 is a ceramic packaged Crystal offering reduced size, ideal for high-density circuit board applications. The Model 405 offers reliable precision and excellent shock performance in wireless telecommunication devices. FEATURES • Standard 5.0x3.2mm Surface Mount Footprint

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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DC axial fans

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