SiGe NPN Transistor

□ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at VCE = 2

SiGe NPN Transistor

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz;

20W TO 140W STEP-DOWN SWITCHING REGULATOR FAMILY

DESCRIPTION The GS-R400/2 series is a family of small sized high current, high voltage step-down switching regulators. The integral heatsink allows a large power handling capability and it provides also an effective shielding to minimize EMI. FEATURES MTBF in excess of 500,000 hours

Low-Cost, Low-Power, 110MHz Op Amp with Disable

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