位置：首页 > IC中文资料 > TGAN25N120FDR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LowVCE(sat)HighspeedIGBT LowVCE(sat)HighspeedIGBT Features •InternationalstandardpackageJEDECTO-247AD •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forlowon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DC | IXYS IXYS Integrated Circuits Division |  |   | |
Extremelyenhancedavalanchecapability GeneralDescription Din-TekFieldStopTrenchIGBTsofferlowswitchinglosses,high energyefficiencyandshortcircuitruggedness. Itisdesignedforapplicationssuchasmotorcontrol,uninterruptedpower supplies(UPS),generalinverters. FEATURES ·Highspeedswitching ·Highruggedness, | DINTEK DinTek Semiconductor Co,.Ltd |  | | |
IGBT GeneralDescription EmployingNPTtechnology,Fairchild’sANseriesofIGBTsprovideslowconductionandswitchinglosses.TheAN seriesoffersansolutionforapplicationsuchasinductionheating(IH),motorcontrol,generalpurposeinvertersanduninterruptiblepowersupplies(UPS). | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Insulated-GateBipolarTransistorinaTO-3PPlasticPackage 文件：769.42 Kbytes Page：6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
1200V,25ANPTTrenchIGBT 文件：1.38861 Mbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAXIMUM |
23+ |
TO-247 |
6000 |
原厂渠道可大量供应 |
|||
INFINEON/英飞凌 |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
|||
FCS |
22+ |
TO-3P |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
23+ |
TO-3P |
36000 |
全新原装 |
|||
KEC |
21+ |
TO-3P |
120000 |
长期代理优势供应 |
|||
ST |
22+ |
TO-3P |
16900 |
支持样品 原装现货 提供技术支持! |
|||
Infineon/英飞凌 |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
90447 |
||||
FSC |
2021+ |
TO-39 |
6430 |
原装现货/欢迎来电咨询 |
|||
FSC |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
TGAN25N120FDR芯片相关品牌
TGAN25N120FDR规格书下载地址
TGAN25N120FDR参数引脚图相关
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DdatasheetPDF页码索引
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