13 - 15 GHz 4W Power Amplifier

Key Features • 0.5 um pHEMT Technology • >25 dB Nominal Gain • >36 dBm Nominal Psat • 44 dBm Nominal IP3 @ 14 GHz • Bias 7V @ 1.3A Idq, 2.1A under RF drive • Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Primary Applications • Ku-Band VSAT Transmit

13 15 GHz 4W Power Amplifier

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13 15 GHz 4W Power Amplifier

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HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

128Kbit Analog Cell Storage Flash Memory Revision 8.0 Apr. 01, 1999

GENERAL DESCRIPTION ML2502 is a record/playback LSI that stores analog signal directly into on-chip Flash memory (128Kbit Cell) without digital conversion utilizing new Analog Storage technology. Such unique features as low voltage operability (2.7 ~ 3.3V), no backup requirement and no external M

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

DESCRIPTION The PS2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2502-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2502L-1, -2, -4 are lead bending type

PLLatinum??Frequency Synthesizer System with Integrated VCO

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