Ku Band Power Amplifier

Key Features and Performance • HFET Technology • 12.5 -15.5 GHz Frequency Range • > 3W Nominal Pout • 24 dB Nominal Gain • 9V @ 1.2A Bias Primary Applications • Ku band Satellite Ground Terminal • VSAT • Point-to-Point Radio

Ku Band Power Amplifier

Ku Band Power Amplifier

Key Features and Performance • HFET Technology • 12.5 -15.5 GHz Frequency Range • > 3W Nominal Pout • 24 dB Nominal Gain • 9V @ 1.2A Bias Primary Applications • Ku band Satellite Ground Terminal • VSAT • Point-to-Point Radio

Ku Band Power Amplifier

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

SWITCHMODE??Schottky Power Rectifirers

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is s

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is s

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara