| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TF80N04 | 丝印代码：80N04P；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF80 N04 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to mini | TUOFENG 拓锋半导体 |   | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | |
TF80N04芯片相关品牌
TF80N04规格书下载地址
TF80N04参数引脚图相关
- u300
- u202
- u1205
- t触发器
- type-c
- tx20
- ttl电平
- ttl电路
- tsmc
- tsl2561
- tsl230
- tr100
- tps61200
- tmds
- tm7705
- tl7705
- tl494
- tl431
- tip127
- tip122
- TFA3351
- TFA10X
- TFA108S
- TFA108I
- TFA108
- TFA107S
- TFA107I
- TFA107
- TF944
- TF921
- TF915
- TF913
- TF8A80
- TF8A60
- TF861S
- TF861M
- TF859
- TF858
- TF856
- TF855
- TF851
- TF841S
- TF841M
- TF821S
- TF821M
- TF8205C
- TF8205A_V1.1
- TF8205A_V01
- TF8205A
- TF8205_V1.1
- TF8205_V1.0
- TF8205_V01
- TF8205
- TF-81615
- TF80P03
- TF80N80
- TF80N03
- TF809-1200-20
- TF809-1200-18
- TF809-1200-16-20
- TF809-1200-16
- TF807L
- TF-8072-ND
- TF80-7
- TF806L
- TF805L
- TF-8050-ND
- TF80-5
- TF804L
- TF803L
- TF802L
- TF-8026-ND
- TF801L
- TF-8011-ND
- TF-8010-ND
- TF80-10
- TF75-7
- TF75-5
- TF75-10
- TF709
- TF708
- TF707
- TF6A60
- TF6664N
- TF666
- TF656R
TF80N04数据表相关新闻
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DdatasheetPDF页码索引
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