丝印代码：70N02；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF70N02 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

场效应管(MOSFET)

N-channel 24V - 0.0068ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET

Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. Thisis suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. ■ RDS(ON)* Qg industry’s benchmark ■ Conduction losses redu

N-Channel Enhancement Mode Power MOSFET

文件：491.51 Kbytes Page：6 Pages

N-Channel Enhancement Mode Power MOSFET

文件：491.51 Kbytes Page：6 Pages

N-Channel Enhancement Mode Power MOSFET

文件：491.51 Kbytes Page：6 Pages

N - Channel Logic Level Enhancement Mode Field Effect Transistor

文件：52.69 Kbytes Page：3 Pages