N-channel Silicon Junction FET Electret Condenser Microphone

文件：50.61 Kbytes Page：4 Pages

N-Channel JFET

文件：333.39 Kbytes Page：7 Pages

N-channel Silicon Junction FET Electret Condenser Microphone

Electret Condenser Microphone Applications

文件：440.63 Kbytes Page：7 Pages

N-Channel JFET

文件：333.39 Kbytes Page：7 Pages

封装/外壳：3-SMD，扁平引线 包装：散装 描述：JFET N-CH 1MA 100MW VTFP 分立半导体产品 晶体管 - JFET

Electret Condenser Microphone Applications

文件：440.63 Kbytes Page：7 Pages

Electret Condenser Microphone Applications

文件：440.63 Kbytes Page：7 Pages

封装/外壳：3-SMD，扁平引线 包装：散装 描述：JFET N-CH 0.1W 3VTFP 分立半导体产品 晶体管 - JFET

N-Channel JFET

文件：333.39 Kbytes Page：7 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Square Type

文件：31.46 Kbytes Page：1 Pages