N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF060N04NG combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to

场效应管(MOSFET)

N-Channel Enhancement Mode Power MOSFET

Description The GT060N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT060N04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT060N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters