丝印代码：TF050N03M；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N03MG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchi

N-Channel 30-V (D-S) MOSFET

文件：1.77387 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.73825 Mbytes Page：8 Pages

丝印代码：050N03LS；OptiMOS?? Power-MOSFET

文件：527.82 Kbytes Page：10 Pages

丝印代码：050N03LS；OptiMOS?? Power-MOSFET

文件：391.15 Kbytes Page：10 Pages

丝印代码：050N03MS；OptiMOS?? M-Series Power-MOSFET

文件：299.27 Kbytes Page：10 Pages