CEPT/T1 Output Transformer

TEW4976 is designed and recommended to be used as a transmit transformer in T1 and CEPT applications with the following devices: CRYSTAL CS61535A, CS61574A, CS61575 CS6158A. Level One LXT304A, LXT305A Complies with ANSI T1.408 and CCITT I.431. Typical applications are: • Primary rate ISDN netw

CEPT/T1 Output Transformer

TEW4976 is designed and recommended to be used as a transmit transformer in T1 and CEPT applications with the following devices: CRYSTAL CS61535A, CS61574A, CS61575 CS6158A. Level One LXT304A, LXT305A Complies with ANSI T1.408 and CCITT I.431. Typical applications are: • Primary rate ISDN netw

CEPT/T1 Output Transformer

TEW4976 is designed and recommended to be used as a transmit transformer in T1 and CEPT applications with the following devices: CRYSTAL CS61535A, CS61574A, CS61575 CS6158A. Level One LXT304A, LXT305A Complies with ANSI T1.408 and CCITT I.431. Typical applications are: • Primary rate ISDN netw

CEPT/T1 Output Transformer

TEW4976 is designed and recommended to be used as a transmit transformer in T1 and CEPT applications with the following devices: CRYSTAL CS61535A, CS61574A, CS61575 CS6158A. Level One LXT304A, LXT305A Complies with ANSI T1.408 and CCITT I.431. Typical applications are: • Primary rate ISDN netw

CEPT/T1 Output Transformer

TEW4976 is designed and recommended to be used as a transmit transformer in T1 and CEPT applications with the following devices: CRYSTAL CS61535A, CS61574A, CS61575 CS6158A. Level One LXT304A, LXT305A Complies with ANSI T1.408 and CCITT I.431. Typical applications are: • Primary rate ISDN netw

1A STEP DOWN SWITCHING REGULATOR

Description The L4976 is a step down monolithic power switching regulator delivering 1A at a voltage between 3.3V and 50V (selected by a simple external divider). Realized in BCD mixed technology, the device uses an internal power DMOS transistor (with a typical Rds(ON) of 0.25Ω) to obtain very h

1A STEP DOWN SWITCHING REGULATOR

Description The L4976 is a step down monolithic power switching regulator delivering 1A at a voltage between 3.3V and 50V (selected by a simple external divider). Realized in BCD mixed technology, the device uses an internal power DMOS transistor (with a typical Rds(ON) of 0.25Ω) to obtain very h

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

High Precision Hall-Effect Switch

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