Silicon NPN Phototransistor

DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High

Silicon NPN Phototransistor

DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 •

Silicon NPN Phototransistor

DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 •

Silicon NPN Phototransistor

Package type: leaded\nPackage form: T-1\nDimensions (in mm): Ø 3;

封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PHOTOTRANSISTOR 875 TO 1000 NM 传感器，变送器 光学传感器 - 光电晶体管

Silicon NPN Phototransistor

文件：109.53 Kbytes Page：5 Pages

Silicon NPN Phototransistor, RoHS Compliant

文件：110.15 Kbytes Page：5 Pages

Silicon NPN Phototransistor

DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 •

Silicon NPN Phototransistor

DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 •

Silicon NPN Phototransistor

Package type: leaded\nPackage form: T-1\nDimensions (in mm): Ø 3;

Silicon NPN Phototransistor, RoHS Compliant

文件：110.15 Kbytes Page：5 Pages

Silicon NPN Phototransistor

文件：109.53 Kbytes Page：5 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy