Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBT and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allo

先进的IGBT/MOSFET驱动器

This device is an advanced gate driver for IGBT and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.\n\n The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a • 1.7 A sink / 1.3 A source (typ) current capability \n• Active Miller clamp feature \n• Two-level turn-off with adjustable level and delay \n• Input compatible with pulse transformer or optocoupler \n• UVLO protection \n• 2 kV ESD protection;

光耦合器-Transistor

丝印代码：TD351I；Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBT and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allo

丝印代码：TD351I；Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBT and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allo

丝印代码：TD351I；Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBT and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allo

Advanced IGBT/MOSFET driver

文件：249.02 Kbytes Page：19 Pages

Advanced IGBT/MOSFET driver

文件：249.11 Kbytes Page：19 Pages

Advanced IGBT/MOSFET driver

文件：249.11 Kbytes Page：19 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HIGH-SIDE 8SO 集成电路（IC） 栅极驱动器

封装/外壳：8-DIP（0.300"，7.62mm） 包装：散装 描述：IC GATE DRVR HIGH-SIDE 8DIP 集成电路（IC） 栅极驱动器

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum

Square Type

文件：30.74 Kbytes Page：1 Pages