2-INPUT AND GATE

2-Input AND Gate Features • High Speed : tpd =7ns (typ.) at VCC= 5 V • Low power dissipation : ICC= 1 μA (max) at Ta = 25°C • High noise immunity : VNIH= VNIL= 28 VCC (min) • Output drive capability : 5 LSTTL Loads • Symmetrical Output Impedance |IOH| = IOL= 2mA (min)

L-MOS high-speed series

2-INPUT AND GATE

2-Input AND Gate Features • High Speed : tpd =7ns (typ.) at VCC= 5 V • Low power dissipation : ICC= 1 μA (max) at Ta = 25°C • High noise immunity : VNIH= VNIL= 28 VCC (min) • Output drive capability : 5 LSTTL Loads • Symmetrical Output Impedance |IOH| = IOL= 2mA (min)

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 1CH 2-INP SMV 集成电路（IC） 门和反相器

2-INPUT AND GATE

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

文件：210.35 Kbytes Page：7 Pages

2-INPUT AND GATE

文件：229.28 Kbytes Page：6 Pages

L-MOS high-speed series

封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 1CH 2-INP USV 集成电路（IC） 门和反相器

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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2-input AND gate

■General description ELM7S08B is CMOS 2-input AND gate IC. It realizes high speed operation similar to LS-TTL with lower power consumption by CMOS features. The inner circuit structure of 3-stage logic gate obtains wider noise immunity and constant output ■Features • Same electrical cha

SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT AND GATE)

The KIC7S08FU is a high speed C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables

CMOS LOGIC IC

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CMOS LOGIC IC

文件：672.25 Kbytes Page：35 Pages

CMOS LOGIC IC 2-input AND gate

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