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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC5516 | 2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   |
32,768WORDx16BITCMOSSTATICRAM Description TheTC551632Jisa524,288bithighspeedCMOSstaticrandomaccessmemoryorganizedas32,768wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551632Jfeatureslowpowerdissipationwhen | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
32,768WORDx16BITCMOSSTATICRAM Description TheTC551632Jisa524,288bithighspeedCMOSstaticrandomaccessmemoryorganizedas32,768wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551632Jfeatureslowpowerdissipationwhen | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
32,768WORDx16BITCMOSSTATICRAM Description TheTC551632Jisa524,288bithighspeedCMOSstaticrandomaccessmemoryorganizedas32,768wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551632Jfeatureslowpowerdissipationwhen | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
32,768WORDx16BITCMOSSTATICRAM Description TheTC551632Jisa524,288bithighspeedCMOSstaticrandomaccessmemoryorganizedas32,768wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551632Jfeatureslowpowerdissipationwhen | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536WORDx16BITCMOSSTATICRAM Description TheTC551664Jisa1,048,576bithighspeedCMOSstaticrandomaccessmemoryorganizedas65,536wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551664Jfeatureslowpowerdissipationwhe | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536WORDx16BITCMOSSTATICRAM Description TheTC551664Jisa1,048,576bithighspeedCMOSstaticrandomaccessmemoryorganizedas65,536wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551664Jfeatureslowpowerdissipationwhe | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536WORDx16BITCMOSSTATICRAM Description TheTC551664Jisa1,048,576bithighspeedCMOSstaticrandomaccessmemoryorganizedas65,536wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551664Jfeatureslowpowerdissipationwhe | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536WORDx16BITCMOSSTATICRAM Description TheTC551664Jisa1,048,576bithighspeedCMOSstaticrandomaccessmemoryorganizedas65,536wordsby16bitsand operatedfromasingle5Vsupply.Toshiba'sadvancedCMOStechnologyandcircuitdesignenablehighspeedoperation. TheTC551664Jfeatureslowpowerdissipationwhe | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：430.04 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：430.04 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：430.04 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：447.17 Kbytes Page：10 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：447.17 Kbytes Page：10 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：447.17 Kbytes Page：10 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：447.17 Kbytes Page：10 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
65,536-WORDBY16-BITCMOSSTATICRAM 文件：447.17 Kbytes Page：10 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
2,048WORDX8BITCMOSSTATICRAM 文件：551.7 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
HighCurrentRFChokes SpecialFeatures •Veryhighcurrentcapacity •LowDCR •Ferritecore •VW-1ratedshrinktubingtocoverwinding •Fixedleadspacing •Operatingtemperature-55to+105°C •Currenttocause5maximuminductance dropor35°Cmaximumtemperaturerise | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
Photoresistor 文件：283.59 Kbytes Page：5 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
StreetfireCoilsforHEMIEngines 文件：442.46 Kbytes Page：1 Pages | MALLORYMallory Sonalert Products Inc. 马洛里 |  | | |
WireWoundChipInductors 文件：419.16 Kbytes Page：3 Pages | SUMIDASumida America Components Inc. 胜美达电子 |  | | |
HighCurrentChokes 文件：469.54 Kbytes Page：1 Pages | BournsBourns Electronic Solutions 伯恩斯 |  | |
TC5516产品属性
- 类型
描述
- 型号
TC5516
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
2,048 WORD X 8 BIT CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
13216 |
原厂直销,现货供应,账期支持! |
|||
TOSHIBA/东芝 |
25+ |
SOJ-44 |
65428 |
百分百原装现货 实单必成 |
|||
TOSHIBA/东芝 |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
TOS |
25+23+ |
TSSOP |
10321 |
绝对原装正品全新进口深圳现货 |
|||
TOSHIBA/东芝 |
1950+ |
SOJ44 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
TOSHIBA |
22+ |
DIP-24 |
3000 |
原装正品,支持实单 |
|||
TOSHIBA |
25+ |
DIP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
Toshiba |
1 |
公司优势库存 热卖中!! |
|||||
TOSHIBA/东芝 |
22+ |
SOJ44 |
26032 |
原装正品现货 |
|||
TOSHIBA/东芝 |
2402+ |
SOJ44 |
8324 |
原装正品!实单价优! |
TC5516芯片相关品牌
TC5516规格书下载地址
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2020-10-15
DdatasheetPDF页码索引
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