2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

32,768 WORD x 16 BIT CMOS STATIC RAM

Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551632J features low power dissipation when

32,768 WORD x 16 BIT CMOS STATIC RAM

Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551632J features low power dissipation when

32,768 WORD x 16 BIT CMOS STATIC RAM

Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551632J features low power dissipation when

32,768 WORD x 16 BIT CMOS STATIC RAM

Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551632J features low power dissipation when

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

65,536-WORD BY 16-BIT CMOS STATIC RAM

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65,536-WORD BY 16-BIT CMOS STATIC RAM

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：430.04 Kbytes Page：8 Pages

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：430.04 Kbytes Page：8 Pages

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：447.17 Kbytes Page：10 Pages

65,536-WORD BY 16-BIT CMOS STATIC RAM

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：447.17 Kbytes Page：10 Pages

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：447.17 Kbytes Page：10 Pages

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：447.17 Kbytes Page：10 Pages

65,536-WORD BY 16-BIT CMOS STATIC RAM

文件：447.17 Kbytes Page：10 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

2,048 WORD X 8 BIT CMOS STATIC RAM

文件：551.7 Kbytes Page：12 Pages

16-Channel, 12-Bit Voltage-Output DAC with 14-Bit Increment Mode

GENERAL DESCRIPTION The AD5516 is a 16-channel, 12-bit voltage-output DAC. The selected DAC register is written to via the 3-wire serial interface. DAC selection is accomplished via address bits A3–A0. 14-bit resolution can be achieved by fine adjustment in Increment/Decrement Mode (Mode 2).

SILICON PLANAR ZENER DIODES

Features Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request.

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

Single module demodulator and decoder IC for digital video set-top boxes

文件：87.69 Kbytes Page：2 Pages

Silicon Controlled Rectifier (SCR)

文件：18.33 Kbytes Page：2 Pages