4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. M

4,194,304 WORD X 4 BIT DYNAMIC RAM

4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY

Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode as a high speed access mode. Features • Single 5 V (±10) • High speed - Access tim

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

4,194,304-Word 횞 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400D is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal