位置：首页 > IC中文资料第8115页 > TC511664B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TC511664B | 65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 |   | |
TC511664B | 65,536 WORD x 16 BIT DYNAMIC RAM | TOSHIBA 东芝 | | |
65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 | | ||
65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 | | ||
65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 | | ||
65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 | | ||
65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 | | ||
65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBAs CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed | TOSHIBA 东芝 | | ||
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 文件：240.91 Kbytes Page：16 Pages | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 文件：240.91 Kbytes Page：16 Pages | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 文件：240.91 Kbytes Page：16 Pages | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 文件：240.91 Kbytes Page：16 Pages | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 文件：240.91 Kbytes Page：16 Pages | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | |
TC511664B产品属性
- 类型
描述
- 型号
TC511664B
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
65,536 WORD x 16 BIT DYNAMIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
25+ |
ZIP |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHOBA |
2016+ |
SOJ40 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
22+ |
RLCC |
3000 |
原装正品,支持实单 |
|||
TOSHIBA |
25+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
TOSHIBA |
NEW |
TSOP |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
Toshiba |
12 |
公司优势库存 热卖中!! |
|||||
TOSHIBA/东芝 |
2403+ |
SOJ40 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
TOSHIBA |
22+ |
ZIP |
8200 |
原装现货库存.价格优势 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
24+ |
SOP |
102 |
TC511664B规格书下载地址
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